{"id":6789,"date":"2023-09-11T11:18:30","date_gmt":"2023-09-11T09:18:30","guid":{"rendered":"https:\/\/sofs.org.ua\/?page_id=6789"},"modified":"2023-10-23T13:56:10","modified_gmt":"2023-10-23T11:56:10","slug":"1-8","status":"publish","type":"page","link":"https:\/\/sofs.org.ua\/en\/sample-page\/arhiv\/2023-2\/121-2\/1-8\/","title":{"rendered":"1.8"},"content":{"rendered":"

VADYM LASHKARYOV\u2019S SCIENTIFIC CONTRIBUTION IN SEMICONDUCTOR PHYSICS AND TECHNOLOGY (DEVOTED TO THE 120th ANNIVERSARY OF HIS BIRTH) <\/strong><\/p>\n

V.S. SOLNTSEV<\/strong> 1
\n<\/sup>https:\/\/orcid.org\/0000-0003-4441-2667<\/a>
\nP.S. SMERTENKO<\/strong> 1
\n<\/sup>https:\/\/orcid.org\/0000-0001-8793-302X<\/a>
\n1 <\/sup>V. Lashkaryov Institute of Semiconductor Physics of the NAS of Ukraine<\/p>\n

Nauka naukozn. 2023, 3(121): 166\u2014185
\nhttps:\/\/doi.org\/10.15407\/sofs2023.03.166<\/a><\/p>\n

Section<\/strong>: Science and technology history
\nLanguage:<\/strong> Ukrainian
\nAbstract:<\/strong> The article investigates and popularizes the life and work of Vadym Yevhenovych Lashkaryov, an acting member of the Academy of Sciences of the UkrSSR, and a brilliant Ukrainian scientist in semiconductor physics and technology. Its purpose is to show V. Lashkaryov\u2019s outstanding success in activities pertaining to R&D performance and management on the territory of Ukraine. The source base of the research consists of research publications of the scientist, his colleagues and disciples, devoted to electron diffraction physics, photoelectric phenomena, physics of semiconductor single-crystal growth, and charge carrier transport in p- and n-type semiconductors. The research methodology is based on the principles of historicism, objectivity and reliability. Specific historical methods such as classification, synthesis, analysis, and problem-chronological and comparative-historical methods were used. It is shown that the research carrier of V.\u00a0Lashkaryov\u2019s was divided into four main periods: (i)\u00a0formation of his research potential (1924\u20141935); (ii)\u00a0his trials during the exile to Arkhangelsk (1935\u20141939); (iii)\u00a0achievement of his research maturity (1939\u20141944); and (iv)\u00a0creation of his intellectual heritage (1945\u20141970). Results of a scientometric analysis of the V. Lashkaryov\u2019s profile in the Web of Science citation database are given, with focus on recent citation data of his articles, giving evidence that his works still remain relevant today. It is shown that outstanding leadership and organizational traits of V.\u00a0Lashkaryov\u2019s allowed him to lay the foundations of his intellectual heritage in Kyiv in the 40\u201370s of the last century: (i)\u00a0the academic school for theoretical and experimental semiconductor physics; (ii)\u00a0the Department of Semiconductor Physics at Taras Shevchenko Kyiv State University; and (iii)\u00a0the Institute of Semiconductors of the Academy of Sciences of the UkrSSR.<\/p>\n

Keywords<\/strong>: V. Lashkaryov, electron diffraction, p-n junction, current injection, semiconductor physics and technology, Institute of Semiconductors of the Academy of Sciences of UkrSSR.<\/p>\n

References<\/strong><\/p>\n

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    VADYM LASHKARYOV\u2019S SCIENTIFIC CONTRIBUTION IN SEMICONDUCTOR PHYSICS AND TECHNOLOGY (DEVOTED TO THE 120th ANNIVERSARY OF HIS BIRTH) V.S. SOLNTSEV 1 https:\/\/orcid.org\/0000-0003-4441-2667 P.S. SMERTENKO 1 https:\/\/orcid.org\/0000-0001-8793-302X 1 V. Lashkaryov Institute of Semiconductor Physics of the NAS of Ukraine Nauka naukozn. 2023, 3(121): 166\u2014185 https:\/\/doi.org\/10.15407\/sofs2023.03.166 Section: Science and technology history Language: Ukrainian Abstract: The article investigates and […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":6762,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"translation":{"provider":"WPGlobus","version":"2.12.2","language":"en","enabled_languages":["uk","en","ru"],"languages":{"uk":{"title":true,"content":true,"excerpt":false},"en":{"title":true,"content":true,"excerpt":false},"ru":{"title":true,"content":true,"excerpt":false}}},"yoast_head":"\n1.8 - Science and Science of Science<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/sofs.org.ua\/sample-page\/arhiv\/2023-2\/121-2\/1-8\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"1.8 - 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