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1.8

VADYM LASHKARYOV’S SCIENTIFIC CONTRIBUTION IN SEMICONDUCTOR PHYSICS AND TECHNOLOGY (DEVOTED TO THE 120th ANNIVERSARY OF HIS BIRTH)

V.S. SOLNTSEV 1
https://orcid.org/0000-0003-4441-2667
P.S. SMERTENKO 1
https://orcid.org/0000-0001-8793-302X
1 V. Lashkaryov Institute of Semiconductor Physics of the NAS of Ukraine

Nauka naukozn. 2023, 3(121): 166—185
https://doi.org/10.15407/sofs2023.03.166

Section: Science and technology history
Language: Ukrainian
Abstract: The article investigates and popularizes the life and work of Vadym Yevhenovych Lashkaryov, an acting member of the Academy of Sciences of the UkrSSR, and a brilliant Ukrainian scientist in semiconductor physics and technology. Its purpose is to show V. Lashkaryov’s outstanding success in activities pertaining to R&D performance and management on the territory of Ukraine. The source base of the research consists of research publications of the scientist, his colleagues and disciples, devoted to electron diffraction physics, photoelectric phenomena, physics of semiconductor single-crystal growth, and charge carrier transport in p- and n-type semiconductors. The research methodology is based on the principles of historicism, objectivity and reliability. Specific historical methods such as classification, synthesis, analysis, and problem-chronological and comparative-historical methods were used. It is shown that the research carrier of V. Lashkaryov’s was divided into four main periods: (i) formation of his research potential (1924—1935); (ii) his trials during the exile to Arkhangelsk (1935—1939); (iii) achievement of his research maturity (1939—1944); and (iv) creation of his intellectual heritage (1945—1970). Results of a scientometric analysis of the V. Lashkaryov’s profile in the Web of Science citation database are given, with focus on recent citation data of his articles, giving evidence that his works still remain relevant today. It is shown that outstanding leadership and organizational traits of V. Lashkaryov’s allowed him to lay the foundations of his intellectual heritage in Kyiv in the 40–70s of the last century: (i) the academic school for theoretical and experimental semiconductor physics; (ii) the Department of Semiconductor Physics at Taras Shevchenko Kyiv State University; and (iii) the Institute of Semiconductors of the Academy of Sciences of the UkrSSR.

Keywords: V. Lashkaryov, electron diffraction, p-n junction, current injection, semiconductor physics and technology, Institute of Semiconductors of the Academy of Sciences of UkrSSR.

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